Gallium nitride based HEMTs for power applications: High field trapping issues


We review the main physical mechanisms that limit the dynamic performance of GaN-based HEMTs for power applications, exposed to high electric fields. More specifically, we describe: (i) the charge trapping processes responsible for Dynamic-Ron, namely the injection of carriers towards the surface, to the AlGaN/GaN heterostructure, or to the buffer; (ii) the trapping mechanisms related to hot-electrons; (iii) the properties of the point and extended defects responsible for charge trapping in GaN-HEMTs.


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